4英寸用于LED激光引脚器件的N型SSP Si掺杂GaN-on-蓝宝石表位晶片
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重要属性
其他属性
原产地
China
品牌
GaNova
型号
2JDWY03-001-023
类型
GaN晶片
Item
GaN-T-C-N-C100
Dimensions
100 ± 0.2 mm
Thickness/Thickness STD
4.5 ± 0.5 μm / < 3%
Orientation Flat of GaN
(1-100) 0 ± 0.2 °, 30 ± 1 mm
Conduction Type
N-type
*XRD FWHMs
(0002) < 300 arcsec,(10-12) < 400 arcsec
Orientation of Sapphire
C plane (0001) off angle toward M-axis 0.2 ± 0.1 °
Orientation Flat of Sapphire
(11-20) 0 ± 0.2 °, 30 ± 1 mm
Sapphire Polish
Single side polished (SSP) / Double side polished (DSP)
Useable Area
> 90% (edge and macro defects exclusion)
包装和发货信息
Packaging Details
carton
供应能力
供应能力
100000 件 per Month
